<^>e.m.l-l.ond.uctoi ij-*ioaucti, line, 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 rfh25n18, RFH25N20 power mqs field-effect transistors n-channel enhancement-mode power field-effect transistors terminal diagram 25 a, 180v -200v rosioni = 0.15 0 features: soa is power-dissipation limited nanosecond switching speeds linear transfer characteristics high input impedance majority carrier device high-current, low-inductance package n-channel enhancement mode the rfh25n18 and rfh2sn20' are n-channel enhance- ment-mode silicon-gate power field-effect translators designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers tor high-power bipolar switching transistors requiring high speed and low gate-drive power. these types can be operated directly from integrated circuits. the rfh-types are supplied in the jedec to-218ac plastic package. terminal designation rfh25n18 ,oubce RFH25N20 drain jedec to-218ac maximum ratings, absolute-maximum values (tc = 25c): drain-source voltage vms drain-gate voltage, r., = 1 mo vooo gatg-source voltage : -. vos drain current, rms continuous ; i0 pulsed ion power dissipation @ tc - 25c p, derate above tc - 26* c operating and storage temperature t,, t.?, rfhs5n18 RFH25N20 180 180 20 25 60 150 1.2 200 200 v v v a a w w/c -55 to +150 . nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to.be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
rfh25n18, RFH25N20 electrical characteristics, it caie temperature (tc) ? 2sc unleo otherwise specified. characteristic drain-source breakdown voltage gate threshold voltage zero gate voltage drain current gate-source leakage current drain-source on voltage static drain-source on resistance forward transconductance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-oft delay time fall time , thermal resistance junctlon-to-caaa symbol bvoss vas(th) loss loss vm(on)? ro?(on)a gt.a cih cm, c? td(on) t, ta(off) ti r?jc test conditions lo = 1 ma voa = 0 vos = vm lo = 1 ma vds = 145 v v08 = 160v tc = 125c vds - 145 v vds = 160v vRFH25N20 series limits rfhzsn1s mln. 180 2 _ ? ? ? ? 7 ? ? ? 40(typ) 150(typ) 300(typ) 120(typ) - max. ? 4 1 50 100 1.875 5 .15 ? 3500 900 i 400 80 225 400 200 0.83 RFH25N20 mln. 200 2 - " ? 7 ? ? - ?(typ) 150(typ) 300(typ) 120(typ> - max. ? 4 1 50 100 1.875 5 .15 ? ? ? 3500 900 400 80 225 400 200 0.83 units v v /"a na v n mho pf. ns ?c/w "pulsed: pulse duration = 300 /is max., duty cycle = 2%. source-drain diode ratings and characteristics characteristic diode forward voltage v50 ? reverse recovery time u test conditions ibo=12.5a if = 4a, dir/di~100a//is limits rfh2sn18 mln. - m?x. 1.4 300 (typ.) rfh2sn20 mln. - max. 1.4 300 (typ.) units v ns ' pulse test: width < 300 ps. duty cycle a 2%.
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